• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    A microwave balun using TEM wave guides, consists of two second-order reactance sections of electrical lengths equal to about a quarter of the wavelength of a radiofrequency signal comprising an unbalanced input-port and a balanced output-port. Each section (I, II) comprises two strips of microstrip-like wave guides, placed in such a way above the ground plane being the bottom metallization (0) of the lower layered substrate (3) that one of the guides (1, 2) is on the top side of the lower substrate, and the other guide (1', 2') placed thereabove is separated therefrom by the material volume of the upper layered substrate (4) and is on the top side of the upper substrate. The pair of guides, any one from each section, being the pair of input guides (1, 2) is connected with each other by two ends (12, 21), while one of the two remaining ends (11) thereof is connected to the input-port (10), and the other one (22) is terminated for a radio-frequency signal by a reflecting element. The second pair of the remaining wave guides (1', 2') being the pair of output guides, forms with two ends (12', 21' ) thereof, one from each section, a pair of output-port terminals. Each of the remaining ends (22', 11') of the pair of output guides is terminated for a radio-frequency signal by a reflecting element, whereby phases of the said reflecting elements are dependent on the configuration choice of the input and the output-ports and the phase choice of the reflecting element terminating the end of input guides, the opposite one to the input. The cross-section dimensions and material constants of materials used have the values dependent on the required broadband properties according to the set of transmission-reflection parameters of the balun and the required input and output impedance. The balun design according to the invention is designed for utilization within the frequency range of 1-18 GHz.
    公开号:SU1510726A3
    申请号:SU843817577
    申请日:1984-11-28
    公开日:1989-09-23
    发明作者:Марчэвски Войцех；Немыйски Вацлав
    申请人:Польска Акадэмия Наук, Цэнтрум Бадань Космичных (Инопредприятие)；
    IPC主号:
    专利说明:

    3151
    This invention relates to microwave technology and can be used in miniature devices, including monolithic ones.
    The purpose of the invention is to increase integration.
    On. FIG. 1 shows the construction of a simulator; 2, the location of its main conductors in one of its variants.
    The balancing device contains a half-wave conductor 1, open at the end and located between two dielectric substrates 2 and 3, on the outer side of the first of which there are two quarter-wave conductors 4 and 5 located along the AA axis of the half-wave conductor 1 - and the end 6 of the first one and the beginning 7 of the second is separated by a gap 8 located opposite the middle part of the half-wave conductor 1. On the outer side of the second dielectric substrate 3 is the fourth conductor 9, with the beginning of the half-wave half the superconductor 1, the beginning 11 of the first quarter-wave conductor 4 and the beginning of the fourth conductor 12 are single-ended input, and the end 6 of the first quarter-wave conductor 4 and the start 7 of the second quarter-wave conductor 5 are symmetrical output.
    The beginning 11 of the first quarter-wave conductor 4 and the end 13 of the second quarter-wave conductor 5 are shorted in the microwave current. The fourth conductor 9 is made in the form of a grounding base, overlapping the half-wave conductor 1. The thickness h g of the second dielectric substrate 3 is greater than the thickness hj of the first dielectric substrate 2.
    The balancing device operates as follows.
    The microwave signal arriving at the asymmetrical input formed by the beginnings of 10–12 half-wave 1, first 4 quarter-wave and fourth 9 conductors is fed to the symmetric output formed by the end 6 of the first quarter-wave conductor 4 and the beginning 7 of the second quarter-wave conductor 5. By selecting the parameters of the second dielectric substrate (dielectric constant S and thickness h) ensures the equality of the phase velocities of even and odd waves
    connected lines formed by half-wave conductor 1 and quarter-wave conductors 4 and 5. This provides the required output parameters in a wide frequency band. To meet these conditions, it is necessary to choose the thickness h of the second dielectric substrate 3 to be larger than the thickness of the first dielectric substrate 2.
    At the same time, making the fourth conductor 9 in the form of a grounding base overlapping the half-wave conductor 1 provides an increase in the degree of integration, since it allows the dielectric substrate 2 to be placed on a conductive plane.
    The balancing device can be manufactured using either hybrid or monolithic technology, for example, on a GaAs semi-insulating substrate, which is the second dielectric substrate 3. It is advisable to use a dielectric film, for example, SijN, as the first dielectric substrate 2.
    权利要求:
    Claims (1)
    [1]
    Invention Formula
    .. A balancing device containing a half-wave conductor open at the end and located between two dielectric substrates, on the outside of the first of which there are two quarter-wave conductors located along the axis of the half-wave conductor, with the end of the first and the beginning of the second separated by a gap opposite the middle part of the half-wave conductor, and on the outside of the second dielectric substrate is the fourth conductor, with the beginning of the half-wave conductor, the first the quarter-wave conductor and the fourth conductor are the unbalanced input, and the end of the first quarter-wave conductor and the beginning, the second quarter-wave conductor: are the symmetrical output and the beginning of the first quarter-wave conductor and the end of the second quarter-wave conductor are shorted over the microwave current, characterized in that, in order to improve integration, the fourth conductor is designed as a grounding base, overlapping
    515107266
    the half-wave conductor, and the thickness dividing them, is greater than the thickness of the first second second dielectric substrate, the dielectric substrate.
    fic.2
    类似技术:
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    US3497832A|1970-02-24|Radio frequency transmission line tee hybrid
    US3452305A|1969-06-24|Microwave semiconductive device mount
    同族专利:
    公开号 | 公开日
    PL245000A1|1985-07-02|
    CS929284A2|1991-02-12|
    PL141094B1|1987-06-30|
    US4755775A|1988-07-05|
    HU192180B|1987-05-28|
    EP0146086A2|1985-06-26|
    HUT37691A|1986-01-23|
    EP0146086A3|1987-08-26|
    JPS6121601A|1986-01-30|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    US2597853A|1945-01-03|1952-05-27|Us Sec War|Unbalanced to balanced line transformer|
    US2606964A|1948-02-07|1952-08-12|Rca Corp|Radio frequency transmission line circuits|
    US3222621A|1961-01-28|1965-12-07|Nippon Electric Co|Coupling device|
    US3497832A|1967-08-24|1970-02-24|Emerson Electric Co|Radio frequency transmission line tee hybrid|
    US3656071A|1970-06-25|1972-04-11|Rca Corp|Wide band balun|
    US3757342A|1972-06-28|1973-09-04|Cutler Hammer Inc|Sheet array antenna structure|
    US3818385A|1972-09-21|1974-06-18|Aertech|Hybrid junction and mixer or modulator|
    US3845490A|1973-05-03|1974-10-29|Gen Electric|Stripline slotted balun dipole antenna|
    JPS51135351A|1975-05-19|1976-11-24|Matsushita Electric Ind Co Ltd|Frequency converter|
    US3991390A|1975-07-31|1976-11-09|Motorola, Inc.|Series connected stripline balun|
    US4052785A|1975-11-28|1977-10-11|Dana Corporation|Method of making a transformer assembly|
    US4032850A|1976-01-12|1977-06-28|Varian Associates|Coaxial balun with doubly balanced heterodyne converter|
    JPS5423447A|1977-07-25|1979-02-22|Toshiba Corp|Strip line coupling circuit|
    JPS5857001B2|1977-12-23|1983-12-17|Mitsubishi Electric Corp|
    US4186352A|1978-03-23|1980-01-29|Rockwell International Corporation|Signal converter apparatus|
    US4193048A|1978-06-22|1980-03-11|Rockwell International Corporation|Balun transformer|
    US4288762A|1978-09-26|1981-09-08|The United States Of America As Represented By The Secretary Of The Navy|Wideband 180° hybrid junctions|
    US4276521A|1978-12-18|1981-06-30|Trw Inc.|Quadriphase integrated high-speed microwave modulator|
    US4245356A|1979-04-27|1981-01-13|Rockwell International Corporation|Frequency translator|
    DE2929522A1|1979-07-20|1981-01-29|Siemens Ag|SYMMETRIER TRANSFER FOR THE MICROWAVE AREA|
    JPS622483B2|1979-08-31|1987-01-20|Nippon Electric Co|
    US4260963A|1979-10-18|1981-04-07|Rockwell International Corporation|4:1 Balun|
    US4288759A|1980-01-28|1981-09-08|Stover Harry L|Microwave transformer|
    GB2089135B|1980-11-28|1984-08-01|Marconi Co Ltd|Improvements in or relating to baluns|
    US4330868A|1980-12-15|1982-05-18|Rockwell International Corp.|Balun coupled microwave frequency converter|
    US4375699A|1981-03-13|1983-03-01|Rockwell International Corporation|Microwave frequency converter with dual balun port|
    US4371982A|1981-03-13|1983-02-01|Rockwell International Corporation|Microwave frequency converter with economical coupling|
    US4359782A|1981-05-19|1982-11-16|Rockwell International Corporation|Microwave mixer with linking juxtaposed balun port|
    US4392250A|1981-05-19|1983-07-05|Rockwell International Corporation|Symmetric microwave mixer|
    US4392251A|1981-07-24|1983-07-05|Rockwell International Corporation|Symmetric microwave mixer with coplanar diode connection|
    US4380831A|1981-07-24|1983-04-19|Rockwell International Corporation|Symmetric microwave mixer with improved isolation|
    US4399562A|1981-07-24|1983-08-16|Rockwell International Corporation|Full balun mixer|GB8521727D0|1985-08-31|1985-10-02|Plessey Co Plc|Balun circuits|
    US4876744A|1987-01-16|1989-10-24|Matsushita Electric Industrial Co., Ltd.|Mixer with rat race circuit|
    US5025232A|1989-10-31|1991-06-18|Texas Instruments Incorporated|Monolithic multilayer planar transmission line|
    US5280647A|1990-06-14|1994-01-18|Taisei Co., Ltd.|Double-balanced mixer with triple-layer film transformers|
    US5125111A|1990-09-04|1992-06-23|Rockwell International Corporation|Resistive planar ring double-balanced mixer|
    DE4438809B4|1994-10-31|2004-11-04|Rohde & Schwarz Gmbh & Co. Kg|Dipolspeiseanordnung|
    US5745017A|1995-01-03|1998-04-28|Rf Prime Corporation|Thick film construct for quadrature translation of RF signals|
    US5534830A|1995-01-03|1996-07-09|R F Prime Corporation|Thick film balanced line structure, and microwave baluns, resonators, mixers, splitters, and filters constructed therefrom|
    US5774801A|1995-08-23|1998-06-30|Ericsson Inc.|High dynamic range mixer having low conversion loss, low local oscillator input power, and high dynamic range and a method for designing the same|
    US5819169A|1996-05-10|1998-10-06|Northrop Grumman Corporation|High performance mixer structures for monolithic microwave integrated circuits|
    US5781078A|1996-12-05|1998-07-14|Glenayre Electronics, Inc.|Filter enhancement using input-to-output ground isolation and shielding|
    KR100223375B1|1997-06-11|1999-10-15|윤종용|Apparatus and method for automatically contwlling gain in multic-channel communication system|
    US6201439B1|1997-09-17|2001-03-13|Matsushita Electric Industrial Co., Ltd.|Power splitter/ combiner circuit, high power amplifier and balun circuit|
    US5970353A|1998-03-30|1999-10-19|Advanced Micro Devices, Inc.|Reduced channel length lightly doped drain transistor using a sub-amorphous large tilt angle implant to provide enhanced lateral diffusion|
    US6094570A|1998-05-06|2000-07-25|Northrop Grumman|Double-balanced monolithic microwave integrated circuit mixer|
    US6294965B1|1999-03-11|2001-09-25|Anaren Microwave, Inc.|Stripline balun|
    US6351192B1|1999-03-25|2002-02-26|Industrial Technology Research Institute|Miniaturized balun transformer with a plurality of interconnecting bondwires|
    US6133806A|1999-03-25|2000-10-17|Industrial Technology Research Institute|Miniaturized balun transformer|
    US6278340B1|1999-05-11|2001-08-21|Industrial Technology Research Institute|Miniaturized broadband balun transformer having broadside coupled lines|
    JP3840957B2|2001-01-24|2006-11-01|株式会社村田製作所|Non-reciprocal circuit device and communication device|
    US6529090B2|2001-05-15|2003-03-04|Lockheed Martin Corporation|Two-sided printed circuit anti-symmetric balun|
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    JP5249508B2|2006-11-06|2013-07-31|三菱重工業株式会社|Track system|
    TWI351784B|2008-05-29|2011-11-01|Cyntec Co Ltd|Balun|
    EP2348572A4|2008-11-14|2013-04-17|Fujikura Ltd|Resin multilayer device and method for manufacturing same|
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    JP5427702B2|2010-06-11|2014-02-26|パナソニック株式会社|Unbalanced balance converter|
    FR2965112B1|2010-09-21|2013-06-07|Thales Sa|MULTI-LAYER CIRCUIT BROADBAND SYMETRISER FOR NETWORK ANTENNA|
    US8868021B1|2013-04-05|2014-10-21|National Instruments Corporation|Ultra-broadband planar millimeter-wave mixer with multi-octave IF bandwidth|
    CN103474734B|2013-08-20|2016-08-10|京信通信技术有限公司|Electric bridge|
    EP3084880A4|2013-12-19|2017-09-06|Saab Ab|Balun|
    US9692387B2|2015-07-24|2017-06-27|Nxp Usa, Inc.|Balun transformer|
    法律状态:
    优先权:
    申请号 | 申请日 | 专利标题
    PL1983245000A|PL141094B1|1983-12-09|1983-12-09|Microwave balun transformer,especially for mixers and modulators|
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